- All sections
- H - Electricity
- H01L - Semiconductor devices not covered by class
- H01L 27/11578 - Electrically programmable read-only memories; Multistep manufacturing processes therefor with charge-trapping gate insulators, e.g. MNOS or NROM characterised by three-dimensional arrangements, e.g. with cells on different height levels
Patent holdings for IPC class H01L 27/11578
Total number of patents in this class: 854
10-year publication summary
9
|
45
|
85
|
85
|
117
|
180
|
168
|
132
|
77
|
8
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Kioxia Corporation | 9847 |
157 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
147 |
Samsung Electronics Co., Ltd. | 131630 |
112 |
Micron Technology, Inc. | 24960 |
92 |
Sandisk Technologies LLC | 5684 |
90 |
Monolithic 3D Inc. | 270 |
61 |
SK Hynix Inc. | 11030 |
37 |
Macronix International Co., Ltd. | 2562 |
25 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
16 |
Applied Materials, Inc. | 16587 |
15 |
Sunrise Memory Corporation | 192 |
15 |
Lam Research Corporation | 4775 |
9 |
International Business Machines Corporation | 60644 |
7 |
Tokyo Electron Limited | 11599 |
7 |
Toshiba Memory Corporation | 255 |
5 |
Intel Corporation | 45621 |
4 |
United Microelectronics Corp. | 3921 |
4 |
Longitude Flash Memory Solutions Ltd. | 297 |
4 |
Intel NDTM US LLC | 373 |
4 |
Lodestar Licensing Group LLC | 583 |
4 |
Other owners | 39 |